1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The probability that an electron in a metal occupies the Fermi-level at any temperature (> 0 K)
A
$$0$$
B
1
C
0.5
D
1.0
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model is applicable to
A
bipolar junction transistors
B
NMOS transistors
C
unipolar junction transistors
D
junction field-effect transistors
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The breakdown voltage of a transistor with its base open is BVCEO with emitter open is BVCBO, then
A
BVCEO = BVCBO
B
BVCEO > BVCBO
C
BVCEO < BVCBO
D
BVCEO is not related to BVCBO
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Early-Effect in a bipolar junction transistor is caused by
A
Fast-turn-on.
B
Fast-turn-off.
C
Large collector-base reverse bias
D
Large emitter-base forward bias