The breakdown voltage of a transistor with its base open is BV_CEO with emitter open is BV_CBO, then

The Early-Effect in a bipolar junction transistor is caused by

In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$. If the intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is

If $$L\left\{ {f\left( t \right)} \right\} = {{2\left( {s + 1} \right)} \over {{s^2} + 2s + 5}}$$ then $$f\left( {{0^ + }} \right)$$ and $$f\left( \propto \right)$$ are given by ___________.