GATE ECE 1995 | GATE ECE Year Wise Previous Years Questions

PREVIOUS NEXT

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

An R-S latch is

Combinational circuit

Synchronous sequential circuit.

One bit memory element

One clock delay element.

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The minimum number of MOS transistors required to make a dynamic RAM cell is

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The intrinsic impedance of a lossy dielectric medium is given by

$${{j\omega \mu } \over \sigma }$$

$${{j\omega \in } \over \mu }$$

$$\sqrt {{{j\omega \mu } \over {\sigma + j\omega \in }}} $$

$$\sqrt {{\mu \over \in }} $$

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

Copper behaves as a

conductor always.

conductor or dielectric depending on the applied electric field strength.

conductor or dielectric depending on the frequency.

conductor or dielectric depending on the electric current density.

PREVIOUS NEXT

GATE ECE Papers

2024

2023

2022

2021

2019

2018

2017

2016

2015

2014

2013

2012

2011

2010

2009

2008

2007

2006

2005

2004

2003

2002

2001

2000

1999

1998

1997

1996

1995

1994

1993

1992

1991

1990

1989

1988

1987