1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
An R-S latch is
A
Combinational circuit
B
Synchronous sequential circuit.
C
One bit memory element
D
One clock delay element.
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The minimum number of MOS transistors required to make a dynamic RAM cell is
A
1
B
2
C
3
D
4
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The intrinsic impedance of a lossy dielectric medium is given by
A
$${{j\omega \mu } \over \sigma }$$
B
$${{j\omega \in } \over \mu }$$
C
$$\sqrt {{{j\omega \mu } \over {\sigma + j\omega \in }}} $$
D
$$\sqrt {{\mu \over \in }} $$
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
Copper behaves as a
A
conductor always.
B
conductor or dielectric depending on the applied electric field strength.
C
conductor or dielectric depending on the frequency.
D
conductor or dielectric depending on the electric current density.
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