GATE ECE 1995 | GATE ECE Year Wise Previous Years Questions

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GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The minimum number of MOS transistors required to make a dynamic RAM cell is

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The intrinsic impedance of a lossy dielectric medium is given by

$${{j\omega \mu } \over \sigma }$$

$${{j\omega \in } \over \mu }$$

$$\sqrt {{{j\omega \mu } \over {\sigma + j\omega \in }}} $$

$$\sqrt {{\mu \over \in }} $$

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

Copper behaves as a

conductor always.

conductor or dielectric depending on the applied electric field strength.

conductor or dielectric depending on the frequency.

conductor or dielectric depending on the electric current density.

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The electric field strength at a distance point, P, due to a point charge, +q, located at the origin, is 100 $$\mu $$V/m. If the point charge is now enclosed by a perfectly conducting metal sheet sphere whose center is at the origin, then the electric field strength at the point P outside the sphere becomes.

Zero

100 $$\mu $$V/m

-100 $$\mu $$V/m

50 $$\mu $$V/m

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2023