1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
A
is proportional to the electric field for all values of electric field
B
is independent of the electric field
C
increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance.
D
increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field.
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
In a P-type silicon sample, the hole concentration is $$2.25\times10^{15}/cm^3$$. If the intrinsic carrier concentration is $$1.5\times10^{15}/cm^3$$ , the electron concentration is
A
Zero
B
$$10^{10}/cm^3$$
C
$$10^{5}/cm^3$$
D
$$1.5\times10^{25}/cm^3$$
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model is applicable to
A
bipolar junction transistors
B
NMOS transistors
C
unipolar junction transistors
D
junction field-effect transistors
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Early-Effect in a bipolar junction transistor is caused by
A
Fast-turn-on.
B
Fast-turn-off.
C
Large collector-base reverse bias
D
Large emitter-base forward bias
EXAM MAP