1
GATE ECE 2020
Numerical
+1
-0

In the circuit shown below, all the components are ideal. If $V_i$ is +2 V , the current $I_0$ sourced by the OpAmp is $\_\_\_\_$ mA .

GATE ECE 2020 Analog Circuits - Operational Amplifier Question 6 English
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2
GATE ECE 2020
MCQ (Single Correct Answer)
+2
-0.67

Using the incremental low frequency small - signal model of the MOS device, the Norton equivalent resistance of the following circuit is

GATE ECE 2020 Analog Circuits - FET and MOSFET Question 3 English
A

$r_{d s}+R$

B

$\frac{r_{d s}+R}{1+g_m r_{d s}}$

C

$r_{d s}+R+g_m r_{d s} R$

D

$r_{d s}+\frac{1}{g_m}+R$

3
GATE ECE 2020
MCQ (Single Correct Answer)
+2
-0.67

The base of an $n p n$ BJT $T 1$ has a linear doping profile $N_B(x)$ as shown below. The base of another $n p n$ BJT $T 2$ has a uniform doping $N_B$ of $10^{17} \mathrm{~cm}^{-3}$. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common - emitter current gain of $T 2$ is

GATE ECE 2020 Analog Circuits - Bipolar Junction Transistor Question 4 English
A

approximately 2.5 times that of $T 1$.

B

approximately 2.0 times that of $T 1$.

C

approximately 3.0 times that of $T 1$.

D

approximately 0.7 times that of $T 1$.

4
GATE ECE 2020
Numerical
+2
-0

In the voltage regulator shown below, $V_I$ is the unregulated input at 15 V . Assume $V_{B E}=0.7 \mathrm{~V}$ and the base current is negligible for both the BJTs. If the regulated output $V_0$ is 9 V , the value of $R_2$ is $\_\_\_\_$ $\Omega$.

GATE ECE 2020 Analog Circuits - Bipolar Junction Transistor Question 3 English
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