A single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV . The intrinsic Fermi level is shifted from midbandgap energy level by

A $p n$ junction solar cell of area $1.0 \mathrm{~cm}^2$, illuminated uniformly with $100 \mathrm{mWcm}^{-2}$; has the following parameter : Efficiency $=15 \%$, open circuit voltage $=0.7 \mathrm{~V}$, fill factor $=0.8$, and thickness $=200 \mu \mathrm{~m}$. The charge of an electron is $1.6 \times 10^{-19} \mathrm{C}$. The average optical generation rate ( $\mathrm{in} \mathrm{cm}^{-3} \mathrm{~s}^{-1}$ ) is

A one-sided abrupt $p n$ junction diode has a depletion capacitance $C_D$ of 50 pF at a reverse bias 0.2 V . The plot of $\frac{1}{C_D^2}$ versus the applied voltage $V$ for this diode is a straight line as shown in the figure below. The slope of the plot is $\_\_\_\_$ $\times 10^{20} \mathrm{~F}^{-2} \mathrm{~V}^{-1}$.

The band diagram of $p$-type semiconductor with a bandgap of the 1 eV is shown. Using this semiconductor, a MOS capacitor having $V_{T H}$ of $-0.16 \mathrm{~V}, C_{o x}^{\prime}$ of $100 \mathrm{nF} / \mathrm{cm}^2$ and metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is $V_{T H}$, the magnitude of depletion charge per unit area (in $\mathrm{C} / \mathrm{cm}^2$ ) is