1
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The magnetic field along the propagation direction inside a rectangular waveguide with the cross section shown in the figure is $${H_Z} = 3\,\,\cos \,\,(2.094\,\, \times \,\,{10^2}x)\,\,\,\cos \,(2.618\,\, \times \,\,{10^2}y)$$
$$\cos \,\,(6.283\,\, \times \,\,{10^{10}}t\, - \beta \,z)$$
The phase velocity $${V_p}$$ of the wave inside the waveguide satisfies GATE ECE 2012 Electromagnetics - Waveguides Question 23 English
A
$${V_p}$$ > c
B
$${V_p}$$ = c
C
0 < $${V_p}$$ < c
D
$${V_p}$$ = 0
2
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
The radiation pattern of an antenna in spherical co-ordinates is given by $$$F\,(\theta )\, = {\cos ^4}\,\theta \,\,\,;\,\,0\,\, \le \,\,\theta \,\, \le \,\,\pi /2$$$ The directivity of the antenna is
A
10 dB
B
12.6 dB
C
11.5 dB
D
18 dB
3
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 56 English
A
$$Y=\overline A\;\overline B\;+\;\overline C$$
B
$$Y=\left(A+B\right)C$$
C
$$Y=\left(\overline A+\overline B\right)\overline C$$
D
$$Y=AB+C$$
4
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
In the three dimensional view of a silicon n-channel MOS transistor shown below, $$\delta = 20$$ nm. The transistor is of width 1 $$\mu m$$. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and $${\varepsilon _0}$$ = 8.9 $$ \times {10^{ - 12}}$$ F/m. GATE ECE 2012 Electronic Devices and VLSI - IC Basics and MOSFET Question 24 English

The gate-source overlap capacitance is approximately

A
0.7 fF
B
0.7 pF
C
0.35 fF
D
0.24 pF
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