1
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
The diodes and capacitors in the circuit shown are ideal. The voltage v(t) across the diode D1 is GATE ECE 2012 Analog Circuits - Diodes Question 14 English
A
cos (ωt) − 1
B
sin (ωt)
C
1 - cos (ωt)
D
1 - sin (ωt)
2
GATE ECE 2012
MCQ (Single Correct Answer)
+1
-0.3
The current ib through the base of a silicon npn transistor is $$1\;+\;0.1\;\cos\left(10000\;\mathrm\pi\;\mathrm t\right)$$ mA . At 300 K, the $$r_\mathrm\pi$$ in the small signal model of the transistor is GATE ECE 2012 Analog Circuits - Bipolar Junction Transistor Question 52 English
A
$$250\;\Omega$$
B
$$27.5\;\Omega$$
C
$$25\;\Omega$$
D
$$22.5\;\Omega$$
3
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The voltage gain Av of the circuit shown below is GATE ECE 2012 Analog Circuits - Bipolar Junction Transistor Question 24 English
A
$$\left| {{{\rm A}_v}} \right|\, \approx \,200$$
B
$$\left| {{{\rm A}_v}} \right|\, \approx \,100$$
C
$$\left| {{{\rm A}_v}} \right|\, \approx \,20$$
D
$$\left| {{{\rm A}_v}} \right|\, \approx \,10$$
4
GATE ECE 2012
MCQ (Single Correct Answer)
+2
-0.6
The circuit shown is a GATE ECE 2012 Analog Circuits - Operational Amplifier Question 29 English
A
low pass filter with
$${f_3}dB = \,{1 \over {\left( {{R_1} + {R_2}} \right)C}}rad/s$$
B
high pass filter with
$${f_3}dB = \,{1 \over {{R_1}C}}rad/s$$
C
low pass filter with
$${f_3}dB = {1 \over {{R_1}C}}rad/s$$
D
high pass filter with
$${f_3}dB = {1 \over {\left( {{R_1} + {R_2}} \right)C}}rad/s$$
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