1
GATE ECE 2011
MCQ (Single Correct Answer)
+2
-0.6
The electric and magnetic fields for a TEM wave of frequency $$14 GHz$$ in a homogeneous medium of relative permittivity $${\varepsilon _r}$$ and relative permeability $${\mu _r} = 1$$ are given by $$$\overrightarrow E = {E_p}\,\,{e^{j\left( {\omega t - 280\pi y} \right)}}\,\,{\widehat u_z}\,\,V/m$$$ $$$\overrightarrow H = \,\,3\,\,{e^{j\left( {\omega \,t - 280\,\,\pi \,y} \right)}}\,\,\widehat u{\,_x}\,\,A/m$$$

Assuming the speed of light in free space to be $$3\,\, \times {10^8}\,\,\,m/s,$$ the intrinsic impedance of free space to be $$120\,\,\,\pi $$, the relative permittivity $${\varepsilon _r}$$ of the medium and the electric field amplitude $${E_p}$$ are

A
$${\varepsilon _r} = 3,\,\,{E_p} = 120\,\pi $$
B
$${\varepsilon _r} = 3,\,\,{E_p} = 360\,\pi $$
C
$${\varepsilon _r} = 9,\,\,{E_p} = 360\,\pi $$
D
$${\varepsilon _r} = 9,\,\,{E_p} = 120\,\pi $$
2
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
The modes in a rectangular waveguide are denoted by $$T{E_{mn}}\,$$/$$T{M_{mn}}\,$$ where m and n are the eigen numbers along the larger and smaller dimensions of the waveguide respectively. Which one of the following satements is TRUE?
A
The $$T{M_{10}}\,$$ mode of the waveguide does not exist
B
The $$T{E_{10}}\,$$ mode of the waveguide does not exist
C
The $$T{M_{10}}\,$$ and the $$T{E_{10}}\,$$ modes both exist and have the same cut-off frequencies
D
The $$T{M_{10}}\,$$ and the $$T{M_{01}}\,$$ modes both exist and have the same cut-off frequencies.
3
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3

Consider a closed surface S surrounding volume V. If $$\overrightarrow{\mathrm r}$$ is the position vector of a point inside S, with $$\widehat n$$ the unit normal on S, the value of the integral is

GATE ECE 2011 Electromagnetics - Maxwell Equations Question 40 English
A
3 V
B
5 V
C
10 V
D
15 V
4
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
Drift current in the semiconductors depends upon
A
only the electric field
B
only the carrier concentration gradient
C
both the electric field and the carrier concentration
D
both the electric field and the carrier concentration gradient
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