1
GATE ECE 2011
MCQ (Single Correct Answer)
+2
-0.6
The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (tch) of 10 μm is available for conduction. The built-in voltage of the gate P+N junction (Vbi) is -1 V. When the gate to source voltage (VGS) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm GATE ECE 2011 Electronic Devices and VLSI - BJT and FET Question 6 English The channel resistance when VGS = -3 V is
A
360 Ω
B
917 Ω
C
1000 Ω
D
3000 Ω
2
GATE ECE 2011
MCQ (Single Correct Answer)
+2
-0.6
The channel resistance of an N-channel JFET shown in the figure below is 600 W when the full channel thickness (tch) of 10 μm is available for conduction. The built-in voltage of the gate P+N junction (Vbi) is -1 V. When the gate to source voltage (VGS) is 0 V, the channel is depleted by 1 μm on each side due to the built in voltage and hence the thickness available for conduction is only 8 μm GATE ECE 2011 Electronic Devices and VLSI - BJT and FET Question 5 English The channel resistance when VGS = 0 V is
A
480 Ω
B
600 Ω
C
750 Ω
D
1000 Ω
3
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
In the circuit shown below, for the MOS transistors, $$\mu_nC_{ox}\;=\;100\;\mu A/V^2$$ and the threshold voltage VT = 1 V. The voltage Vx at the source of the upper transistor is GATE ECE 2011 Electronic Devices and VLSI - IC Basics and MOSFET Question 57 English
A
1 V
B
2 V
C
3 V
D
3.67 V
4
GATE ECE 2011
MCQ (Single Correct Answer)
+1
-0.3
The system of equations $$x+y+z=6,$$ $$x+4y+6z=20,$$ $$x + 4y + \lambda z = \mu $$ has no solution for values of $$\lambda $$ and $$\mu $$ given by
A
$$\lambda = 6,\,\,\mu = 20$$
B
$$\lambda = 6,\,\,\mu \ne 20$$
C
$$\lambda \ne 6,\,\,\mu = 20$$
D
$$\lambda \ne 6,\,\,\mu \ne 20$$
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