1
GATE ECE 2025
Numerical
+2
-0
Two resistors are connected in a circuit loop of area $5 \mathrm{~m}^2$, as shown in the figure below. The circuit loop is placed on the $x-y$ plane. When a time-varying magnetic flux, with flux-density $B(t)=0.5 t$ (in Tesla), is applied along the positive $z$-axis, the magnitude of current $I$ (in Amperes, rounded off to two decimal places) in the loop is__________ . GATE ECE 2025 Electromagnetics - Maxwell Equations Question 1 English
Your input ____
2
GATE ECE 2025
MCQ (More than One Correct Answer)
+1
-0

Which of the following can be used as an n-type dopant for silicon?

Select the correct option(s).

A
Arsenic
B
Boron
C
Gallium
D
Phosphorous
3
GATE ECE 2025
MCQ (Single Correct Answer)
+2
-0.67
The intrinsic carrier concentration of a semiconductor is $2.5 \times 10^{16} / \mathrm{m}^3$ at 300 K . If the electron and hole mobilities are $0.15 \mathrm{~m}^2 / \mathrm{Vs}$ and $0.05 \mathrm{~m}^2 / \mathrm{Vs}$, respectively, then the intrinsic resistivity of the semiconductor (in $\mathrm{k} \Omega . \mathrm{m}$ ) at 300 K is _________ (Charge of an electron $e=1.6 \times 10^{-19} \mathrm{C}$.)
A
1.65
B
1.25
C
0.85
D
1.95
4
GATE ECE 2025
MCQ (Single Correct Answer)
+2
-0.67

The electron mobility $\mu_n$ in a non-degenerate germanium semiconductor at 300 K is $0.38 \mathrm{~m}^2 / \mathrm{Vs}$.

The electron diffusivity $D_n$ at 300 K (in $\mathrm{cm}^2 / \mathrm{s}$, rounded off to the nearest integer) is ____________

(Consider the Boltzmann constant $k_B=1.38 \times 10^{-23} \mathrm{~J} / \mathrm{K}$ and the charge of an electron $e=1.6 \times 10^{-19} \mathrm{C}$.)

A
26
B
98
C
38
D
10
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