Two resistors are connected in a circuit loop of area $5 \mathrm{~m}^2$, as shown in the figure below. The circuit loop is placed on the $x-y$ plane. When a time-varying magnetic flux, with flux-density $B(t)=0.5 t$ (in Tesla), is applied along the positive $z$-axis, the magnitude of current $I$ (in Amperes, rounded off to two decimal places) in the loop is__________ .

Which of the following can be used as an n-type dopant for silicon?

Select the correct option(s).

The intrinsic carrier concentration of a semiconductor is $2.5 \times 10^{16} / \mathrm{m}^3$ at 300 K . If the electron and hole mobilities are $0.15 \mathrm{~m}^2 / \mathrm{Vs}$ and $0.05 \mathrm{~m}^2 / \mathrm{Vs}$, respectively, then the intrinsic resistivity of the semiconductor (in $\mathrm{k} \Omega . \mathrm{m}$ ) at 300 K is _________ (Charge of an electron $e=1.6 \times 10^{-19} \mathrm{C}$.)

The electron mobility $\mu_n$ in a non-degenerate germanium semiconductor at 300 K is $0.38 \mathrm{~m}^2 / \mathrm{Vs}$.

The electron diffusivity $D_n$ at 300 K (in $\mathrm{cm}^2 / \mathrm{s}$, rounded off to the nearest integer) is ____________

(Consider the Boltzmann constant $k_B=1.38 \times 10^{-23} \mathrm{~J} / \mathrm{K}$ and the charge of an electron $e=1.6 \times 10^{-19} \mathrm{C}$.)