1
GATE ECE 2018
Numerical
+2
-0.67
The logic gates shown in the digital circuit below use strong pull-down nMOS transistors for
LOW logic level at the outputs. When the pull-downs are off, high-value resistors set the
output logic levels to HIGH (i.e. the pull-ups are weak). Note that some nodes are
intentionally shorted to implement “wired logic”. Such shorted nodes will be HIGH only if
the outputs of all the gates whose outputs are shorted are HIGH.
The number of distinct values of X3X2X1X0 (out of the 16 possible values) that give 𝑌 = 1 is _______.
The number of distinct values of X3X2X1X0 (out of the 16 possible values) that give 𝑌 = 1 is _______.
Your input ____
2
GATE ECE 2018
Numerical
+1
-0.33
A traffic signal cycles from GREEN to YELLOW, YELLOW to RED and RED to GREEN.
In each cycle, GREEN is turned on for 70 seconds, YELLOW is turned on for
5 seconds and the RED is turned on for 75 seconds. This traffic light has to be implemented
using a finite state machine (FSM). The only input to this FSM is a clock of 5 second period.
The minimum number of flip-flops required to implement this FSM is _______.
Your input ____
3
GATE ECE 2018
Numerical
+2
-0.67
In the circuit shown below, a positive edge-triggered D Flip-Flop is used for sampling input
data Din using clock CK. The XOR gate outputs 3.3 volts for logic HIGH and 0 volts for
logic LOW levels. The data bit and clock periods are equal and the value of $${{\Delta T} \over {{T_{CK}}}}$$ = 0.15,
where the parameters $$\Delta T$$ and TCK are shown in the figure. Assume that the Flip-Flop and the
XOR gate are ideal.
If the probability of input data bit (Din) transition in each clock period is 0.3, the average value (in volts, accurate to two decimal places) of the voltage at node X, is _______.
If the probability of input data bit (Din) transition in each clock period is 0.3, the average value (in volts, accurate to two decimal places) of the voltage at node X, is _______.
Your input ____
4
GATE ECE 2018
MCQ (Single Correct Answer)
+2
-0.67
A 2 $$ \times $$ 2 ROM array is built with the help of diodes as shown in the circuit below. Here W0
and W1 are signals that select the word lines and B0 and B1 are signals that are output of the
sense amps based on the stored data corresponding to the bit lines during the read operation.
During the read operation, the selected word line goes high and the other word line is in a high impedance state. As per the implementation shown in the circuit diagram above, what are the bits corresponding to Dij (where i = 0 or 1 and j = 0 or 1) stored in the ROM?
During the read operation, the selected word line goes high and the other word line is in a high impedance state. As per the implementation shown in the circuit diagram above, what are the bits corresponding to Dij (where i = 0 or 1 and j = 0 or 1) stored in the ROM?
Paper analysis
Total Questions
Control Systems
5
Digital Circuits
6
Engineering Mathematics
9
Network Theory
4
Signals and Systems
4
General Aptitude
10
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