GATE ECE 2015 Set 1 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2015 Set 1

MCQ (Single Correct Answer)

-0.3

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

Both the P-region and the N-region are heavily doped

The N-region is heavily doped compared to the P-region

The P-region is heavily doped compared to the N-region

An intrinsic silicon region is inserted between the P-region and the N-region

GATE ECE 2015 Set 1

Numerical

-0

In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V₀ (in volts) is ________. GATE ECE 2015 Set 1 Electronic Devices and VLSI - PN Junction Question 21 English

Your input ____

GATE ECE 2015 Set 1

Numerical

-0

A MOSFET in saturation has a drain current of 1 mA for V_DS =0.5V. If the channel length modulation coefficient is 0.05 V^-1, the output resistance (in k$$\Omega $$) of the MOSFET is______

Your input ____

GATE ECE 2015 Set 1

MCQ (Single Correct Answer)

-0.6

For the NMOSFET in the circuit shown, in the threshold voltage is V_th, where V_th>0. The source voltage V_ss is varied from 0 to V_DD. Neglecting the channel length modulation, the drain current I_D as a function of V_ss is represented by GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English

GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English

GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 1

GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 2

GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 3

GATE ECE 2015 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 15 English Option 4

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