GATE ECE 2015 Set 1 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2015 Set 1

MCQ (Single Correct Answer)

-0.3

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

Both the P-region and the N-region are heavily doped

The N-region is heavily doped compared to the P-region

The P-region is heavily doped compared to the N-region

An intrinsic silicon region is inserted between the P-region and the N-region

GATE ECE 2015 Set 1

Numerical

-0

In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output voltage V₀ (in volts) is ________. GATE ECE 2015 Set 1 Electronic Devices and VLSI - PN Junction Question 21 English

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GATE ECE 2015 Set 1

Numerical

-0

The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (C_J) at a reverse bias (V_R) of 1.25V is 5pF, the value of C_J (in pF) when V_R = 7.25V is ___________.

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GATE ECE 2015 Set 1

Numerical

-0

A MOSFET in saturation has a drain current of 1 mA for V_DS =0.5V. If the channel length modulation coefficient is 0.05 V^-1, the output resistance (in k$$\Omega $$) of the MOSFET is______

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