1
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+2
-0.6
For a parallel plate transmission line, let v be the speed of propagation and Z be the characteristic impedance. Neglecting fringe effects, a redution of the spacing between the plates by a factor of two results in
A
halving of v and no change in Z
B
no changes in v and halving of Z
C
no change in both v and Z
D
halving of both v and Z
2
GATE ECE 2014 Set 1
Numerical
+2
-0
In spherical coordinates, let $${{{\widehat a}_{_0}},\,{{\widehat a}_{_\phi }}}$$ denote unit vectors along the $$\theta ,\,\,\phi $$directions. $$$E = {{100} \over r}\sin \,\theta \cos \left( {\omega t - \beta r} \right){\widehat a_{_\theta }}\,\,V/m$$$
and $$$H = {{0.265} \over r}\sin \,\theta \cos \left( {\omega t - \beta r} \right){\widehat a_{_\phi }}\,\,A/m$$$

Represent the electric and magnetic field components of the EM wave at large distances $$r$$ from a dipole antenna, in free space. The average power $$(W)$$ crossing the hemispherical shell located at $$r = 1\,\,km$$, $$0 \le \theta \le \pi /2$$ _______.

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3
GATE ECE 2014 Set 1
Numerical
+1
-0
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.
Your input ____
4
GATE ECE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
A
a decrease in the threshold voltage
B
channel length modulation
C
an increase in substrate leakage current
D
an increase in accumulation capacitance
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