1
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following field patterns represents a TEM wave traveling in the positive $$x$$ direction?
A
$$E = + 8\widehat y,\,\,H = - 4\widehat z$$
B
$$E = - 2\widehat y,\,\,H = - 3\widehat z$$
C
$$E = + 2\widehat y,\,\,H = + 2\widehat z$$
D
$$E = - 3\widehat y,\,\,H = + 4\widehat z$$
2
GATE ECE 2014 Set 2
Numerical
+1
-0
To maximize power transfer, a lossless transmission line is to be matched to a resistive load impedance via a $$\lambda /4$$ transformer as shown. GATE ECE 2014 Set 2 Electromagnetics - Transmission Lines Question 48 English
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3
GATE ECE 2014 Set 2
Numerical
+2
-0
Assume electronic charge q = 1.6ร—10-19 C, kT/q = 25 mV and electron mobility ฮผn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1ร—1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.
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4
GATE ECE 2014 Set 2
Numerical
+2
-0
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 ยตm and the permittivity of silicon (ฮตsi) is 1.044ร—10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________. GATE ECE 2014 Set 2 Electronic Devices and VLSI - PN Junction Question 16 English
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