1
GATE ECE 2014 Set 2
Numerical
+2
-0
Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm4, the magnitude of electron diffusion current density (in A/cm2) is _________.
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2
GATE ECE 2014 Set 2
Numerical
+2
-0
Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width Xn on the N-side of the junction is 0.2 µm and the permittivity of silicon (εsi) is 1.044×10-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________. GATE ECE 2014 Set 2 Electronic Devices and VLSI - PN Junction Question 8 English
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3
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An increase in the base recombination of a BJT will increase
A
the common emitter dc current gain $$\beta$$
B
the breakdown voltage BVCEO
C
the unity-gain cut-off frequency fT
D
the transconductance gm
4
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
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