Consider an abrupt PN junction (at T = 300 K) shown in the figure. The depletion region width X_n on the N-side of the junction is 0.2 µm and the permittivity of silicon (ε_si) is 1.044×10^-12 F/cm. At the junction, the approximate value of the peak electric field (in kV/cm) is _________.

An increase in the base recombination of a BJT will increase

In CMOS technology, shallow P-well or N-well regions can be formed using

For the n-channel MOS transistor shown in the figure, the threshold voltage V_Th is 0.8V. Neglect channel length modulation effects. When the drain voltage V_D = 1.6 V, the drain current I_D was found to be 0.5 mA.