1
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An increase in the base recombination of a BJT will increase
A
the common emitter dc current gain $$\beta$$
B
the breakdown voltage BVCEO
C
the unity-gain cut-off frequency fT
D
the transconductance gm
2
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+1
-0.3
In CMOS technology, shallow P-well or N-well regions can be formed using
A
low pressure chemical vapour deposition
B
low energy sputtering
C
low temperature dry oxidation
D
low energy ion-implantation
3
GATE ECE 2014 Set 2
MCQ (Single Correct Answer)
+2
-0.6
For the n-channel MOS transistor shown in the figure, the threshold voltage VTh is 0.8V. Neglect channel length modulation effects. When the drain voltage VD = 1.6 V, the drain current ID was found to be 0.5 mA. GATE ECE 2014 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 23 English
A
0.625
B
0.75
C
1.125
D
1.5
4
GATE ECE 2014 Set 2
Numerical
+2
-0
For the MOSFETs shown in the figure, the threshold voltage |Vt| = 2V and
K=$${1 \over 2}\mu {C_{OX}}\left( {{W \over L}} \right) = 0.1mA/{V^2}$$ . The value of ID (in mA) is _______ GATE ECE 2014 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 22 English
Your input ____
EXAM MAP
Medical
NEETAIIMS
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
Civil Services
UPSC Civil Service
Defence
NDA
Staff Selection Commission
SSC CGL Tier I
CBSE
Class 12