1
GATE ECE 1989
MCQ (Single Correct Answer)
+2
-0.6
The electric field strength at a far-off point P due to a point charge + q, located at the origin O is 100 millivolts/metre. The point charge is now enclosed by a perfectly conducting hollow metal sphere with its centre at the origin O. The electric field strength at the point, P,
A
remains unchanged in its magnitude and direction
B
remains unchanged in its magnitude but reverse in direction
C
would be that due to a dipole formed by the charge + q at O and - q induced
D
would be zero
2
GATE ECE 1989
MCQ (Single Correct Answer)
+2
-0.6
A 50 ohm lossless transmission line has a pure reactance of (j100) ohms as its load. The VSWR in the line is :
A
1/2
B
2
C
4
D
$$\infty $$
3
GATE ECE 1989
MCQ (Single Correct Answer)
+2
-0.6
The skin - depth of copper at a frequency of $$3 GHz$$ is $$1$$ micron ($${{{10}^{ - 6}}}$$ metre). At $$12 GHz$$, for a non - magnetic conductor whose conductivity is $$1/9$$ times that of copper, the skin $$-$$ depth would be
A
$$\sqrt {9 \times 4} $$ microns
B
$$\sqrt {9/4} \,\,$$ microns
C
$$\sqrt {4/9} \,\,$$ microns
D
$${1 \over {\sqrt {9 \times 4} }}\,$$ microns
4
GATE ECE 1989
MCQ (Single Correct Answer)
+1
-0.3
In a microprocessor system, the stack is used for
A
storing the program return address whenever a sub-routine jump instruction is executed.
B
transmitting and receiving input-output data.
C
storing all important CPU register contents whenever an interrupt is to be serviced.
D
storing program instructions for interrupt service routines.
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