1
GATE EE 2002
MCQ (Single Correct Answer)
+1
-0.3
The forward resistance of the diode shown in figure is $$5\Omega $$ and the remaining parameters are same as those of ideal diode. The $$DC$$ component of the source current is GATE EE 2002 Analog Electronics - Diode Circuits and Applications Question 26 English
A
$${{{V_m}} \over {50\pi }}$$
B
$${{{V_m}} \over {50\pi \sqrt 2 }}$$
C
$${{{V_m}} \over {100\pi \sqrt 2 }}$$
D
$${{2{V_m}} \over {50\pi }}$$
2
GATE EE 2002
MCQ (Single Correct Answer)
+2
-0.6
A diode whose terminal characteristics are related as $${i_D} = {{\rm I}_S}\,{e^{{V \over {{V_T}}}}},\,$$ where $${{\rm I}_S}$$ is the reverse saturation current and $${V_T}$$ is thermal voltage ($$25$$ $$mV$$) is biased at $${i_D} = 2\,mA.$$ Its dynamic resistance is _______.
A
$$25\,\Omega $$
B
$$12.5\,\Omega $$
C
$$50\,\Omega $$
D
$$100\,\Omega $$
3
GATE EE 2002
MCQ (Single Correct Answer)
+2
-0.6
In the single phase diode bridge rectifier shown in the figure, the load resistor is $$R = 50\,\Omega .$$ The source voltage is $$V=200$$ $$sin$$ $$\omega t,$$ where $$\omega = 2\pi \, \times \,50\,rad/sec.$$ The power dissipated in the load resistor $$R$$ is GATE EE 2002 Analog Electronics - Diode Circuits and Applications Question 16 English
A
$${{3200\,W} \over \pi }$$
B
$${{400\,W} \over \pi }$$
C
$${400\,W}$$
D
$${800\,W}$$
4
GATE EE 2002
Subjective
+5
-0
For the circuit shown in Figure, $${{\rm I}_E} = 1\,\,mA,\,\,\,\beta = 99$$ and $${V_{BE}} = 0.7\,\,V$$ determine

(a) Current through $${R_1}$$ and $${R_C}$$
(b) The output voltage $${V_0}$$
(c) The value of $${R_F}$$

GATE EE 2002 Analog Electronics - Bjt and Mosfet Biasing Question 9 English
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