An $n$-channel MOSFET is connected as shown in the Figure.

Assume $\mathrm{V}_{\mathrm{TH}}=1 \mathrm{~V}, V_{D D}=5 \mathrm{~V}$, and $\mu C_{O x}\left(\frac{W}{L}\right)=2 \mathrm{mAV}^{-2}$ and neglect channel length modulation effects.

The gate voltage ( $V_G$ ) of the n-channel MOSFET (in Volt) is $\_\_\_\_$ . (rounded off to two decimal places)

Consider an ideal OP-AMP circuit as shown in the Figure.

The resistances $R_1=R_2=R_3=R_4=50 \mathrm{k} \Omega$.

The magnitude of the closed loop gain is $\_\_\_\_$ . (rounded off to two decimal places)

Consider the ideal diodes D1 and D2 as shown in the Figure with cut-in voltage $V_\gamma=$ 0 Volt and $v_i(t)$ is in Volt.

The maximum voltage (Volt) of the output $v_o(t)$ is $\_\_\_\_$ .

(rounded off to two decimal places)

Consider a discrete memoryless source with an alphabet of four source symbols. $s(t)$ is a multi-level ( $-1,0,+1,+2$ ) signal representing a long sequence of random symbols from the above source which is generating $10^4$ symbols per second. Which of the following options is the correct value of equivalent Nyquist bandwidth of $s(t)$ ?