Consider carrier transport in a Zener diode in the breakdown region. Which is the dominant transport mechanism for current flow in this case?

Consider a p-n junction diode when it is forward biased with 2 V . Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{f n}$ in the n -side and $E_{f p}$ in the $p$-side?

Figure shows the output characteristics of two different Bipolar Junction

Transistors (BJT), BJT 1 with magnitude of Early voltage $\left|V_{A 1}\right|$, and BJT 2 with magnitude of Early voltage $\left|V_{A 2}\right|$.

Which of the following options is/are correct regarding the Early voltages?

Consider an LED based on a direct bandgap semiconductor material with energy bandgap 1.3 eV .

Given: Plank's constant, $h=6.63 \times 10^{-34} \mathrm{~J} \mathrm{~s}$ and speed of light in free space is $3 \times 10^8 \mathrm{~m} \mathrm{~s}^{-1}$.

In which of the following wavelength ranges the LED will NOT emit?