1
GATE ECE 2026
MCQ (Single Correct Answer)
+2
-0.67

A complex load (in $\Omega$ ) is represented as $\Gamma_L=0.5 \angle 30^{\circ}$ on the Smith chart. A co-axial cable with a characteristic impedance of $50 \Omega$ is connected to the load. The new input impedance of the load now moves to a diametrically opposite point on the same $\Gamma$ circle on the Smith chart.

Which option is the nearest input impedance of the cable connected load (in $\Omega$ )?

A

$20.7-j 5.1$

B

$17.7-j 11.8$

C

$97.5-j 65.0$

D

$97.5+j 65.0$

2
GATE ECE 2026
MCQ (Single Correct Answer)
+1
-0.33

Consider carrier transport in a Zener diode in the breakdown region. Which is the dominant transport mechanism for current flow in this case?

A

Drift

B

Diffusion

C

Tunneling

D

Ballistic transport

3
GATE ECE 2026
MCQ (Single Correct Answer)
+1
-0.33

Consider a p-n junction diode when it is forward biased with 2 V . Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{f n}$ in the n -side and $E_{f p}$ in the $p$-side?

A

2 eV

B

1 eV

C

2 V

D

1 V

4
GATE ECE 2026
MCQ (More than One Correct Answer)
+1
-0.33

Figure shows the output characteristics of two different Bipolar Junction

Transistors (BJT), BJT 1 with magnitude of Early voltage $\left|V_{A 1}\right|$, and BJT 2 with magnitude of Early voltage $\left|V_{A 2}\right|$.

Which of the following options is/are correct regarding the Early voltages?

GATE ECE 2026 Electronic Devices and VLSI - BJT and FET Question 1 English

A

$\left|V_{A 1}\right|>\left|V_{A 2}\right|$

B

$\left|V_{A 1}\right|$ is infintely large

C

$\left|V_{A 1}\right|<\left|V_{A 2}\right|$

D

$\left|V_{A 2}\right|$ is infinte