1
GATE ECE 2023
Numerical
+2
-0.67

In an extrinsic semiconductor, the hole concentration is given to be 1.5$$n_i$$ where $$n_i$$ is the intrinsic carrier concentration of 1 $$\times$$ 10$$^{10}$$ $$cm^{-3}$$. The ratio of electron to hole mobility for equal hole and electron drift current is given as ___________ (rounded off to two decimal places).

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2
GATE ECE 2023
Numerical
+2
-0.67

In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T = 300 K is 1 $$\times$$ 10$$^{19}$$ cm$$^{-3}$$. The thermal equilibrium hole concentration in silicon at 400 K is _____________ $$\times$$ 10$$^{13}$$ cm$$^{-3}$$ (rounded off to two decimal places).

Given kT at 300 K is 0.026 eV.

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3
GATE ECE 2023
Numerical
+2
-0.67

In the circuit below, the voltage V$$_{\mathrm{L}}$$ is _____________ V (rounded off to two decimal places).

GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 3 English

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4
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33

Let $${v_1} = \left[ {\matrix{ 1 \cr 2 \cr 0 \cr } } \right]$$ and $${v_2} = \left[ {\matrix{ 2 \cr 1 \cr 3 \cr } } \right]$$ be two vectors. The value of the coefficient $$\alpha$$ in the expression $${v_1} = \alpha {v_2} + e$$, which minimizes the length of the error vector e, is

A
$${7 \over 2}$$
B
$${{ - 2} \over 7}$$
C
$${2 \over 7}$$
D
$${{ - 7} \over 2}$$
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