1
GATE ECE 2023
MCQ (Single Correct Answer)
+1
-0.33

For a MOS capacitor, $$\mathrm{V_{fb}}$$ and $$\mathrm{V_{t}}$$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($$\mathrm{W_{dep}}$$) for varying gate voltage ($$\mathrm{V_{g}}$$) is best represented by

A
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 1
B
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 2
C
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 3
D
GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 2 English Option 4
2
GATE ECE 2023
Numerical
+2
-0.67

In an extrinsic semiconductor, the hole concentration is given to be 1.5$$n_i$$ where $$n_i$$ is the intrinsic carrier concentration of 1 $$\times$$ 10$$^{10}$$ $$cm^{-3}$$. The ratio of electron to hole mobility for equal hole and electron drift current is given as ___________ (rounded off to two decimal places).

Your input ____
3
GATE ECE 2023
Numerical
+2
-0.67

In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T = 300 K is 1 $$\times$$ 10$$^{19}$$ cm$$^{-3}$$. The thermal equilibrium hole concentration in silicon at 400 K is _____________ $$\times$$ 10$$^{13}$$ cm$$^{-3}$$ (rounded off to two decimal places).

Given kT at 300 K is 0.026 eV.

Your input ____
4
GATE ECE 2023
Numerical
+2
-0.67

In the circuit below, the voltage V$$_{\mathrm{L}}$$ is _____________ V (rounded off to two decimal places).

GATE ECE 2023 Electronic Devices and VLSI - IC Basics and MOSFET Question 3 English

Your input ____
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