In the circuit below, the diode is ideal. The voltage V is given by

Consider the CMOS circuit shown, where the gate voltage of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the transconductance parameter and the $$\left(\frac WL\right)$$ ratio, i.e. the quantity $$\mu C_{ox}\left(\frac WL\right)$$ , is 1 mAV^-2.
For small increase in V_G beyond 1 V, which of the following gives the correct description of the region of operation of each MOSFET?

Consider the CMOS circuit shown, where the gate voltage of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the transconductance parameter and the $$\left(\frac WL\right)$$ ratio, i.e. the quantity $$\mu C_{ox}\left(\frac WL\right)$$ , is 1 mAV^-2.
Estimate the output voltage V₀ for V_G =1.5 V. [Hints: Use the appropriate current-voltage equation for each MOSFET, based on the answer]

The eigen values of the following matrix $$\left[ {\matrix{ { - 1} & 3 & 5 \cr { - 3} & { - 1} & 6 \cr 0 & 0 & 3 \cr } } \right]$$ are