1
GATE ECE 2009
+2
-0.6
In the circuit below, the diode is ideal. The voltage V is given by
A
Min (Vi, 1)
B
Max (Vi, 1)
C
Min (-Vi, 1)
D
Max (-Vi, 1)
2
GATE ECE 2009
+2
-0.6
Consider the CMOS circuit shown, where the gate voltage of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the transconductance parameter and the $$\left(\frac WL\right)$$ ratio, i.e. the quantity $$\mu C_{ox}\left(\frac WL\right)$$ , is 1 mAV-2.
For small increase in VG beyond 1 V, which of the following gives the correct description of the region of operation of each MOSFET?
A
Both the MOSFETs are in saturation region
B
Both the MOSFETs are in triode region
C
n-MOSFET is triode and p-MOSFET is in saturation region
D
n-MOSFET is in saturation and p-MOSFET is in triode region
3
GATE ECE 2009
+2
-0.6
Consider the CMOS circuit shown, where the gate voltage of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistors, the magnitude of the threshold voltage is 1 V and the product of the transconductance parameter and the $$\left(\frac WL\right)$$ ratio, i.e. the quantity $$\mu C_{ox}\left(\frac WL\right)$$ , is 1 mAV-2.
Estimate the output voltage V0 for VG =1.5 V. [Hints: Use the appropriate current-voltage equation for each MOSFET, based on the answer]
A
$$\left(4-\frac1{\sqrt2}\right)V$$
B
$$\left(4+\frac1{\sqrt2}\right)V$$
C
$$\left(4-\frac{\sqrt3}2\right)V$$
D
$$\left(4+\frac{\sqrt3}2\right)V$$
4
GATE ECE 2009
+2
-0.6
The eigen values of the following matrix $$\left[ {\matrix{ { - 1} & 3 & 5 \cr { - 3} & { - 1} & 6 \cr 0 & 0 & 3 \cr } } \right]$$ are
A
$$3, 3 + 5j, 6 - j$$
B
$$-6 + 5j, 3 + j, 3 - j$$
C
$$3+j, 3-j, 5+j$$
D
$$3, -1+3j, -1-3j$$
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