1
GATE ECE 1994
True or False
+1
-0
Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.
A
TRUE
B
FALSE
2
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of the current carriers through the channel of an FET decides its ____________characteristics.
3
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
The threshold voltage of an n-channel MOSFET can be increased by
A
increasing the channel dopant concentration
B
reducing the channel dopant concentration
C
reducing the gate-oxide thickness
D
reducing the channel length
4
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
The following system of equations
$${{x_1} + {x_2} + {x_3} = 3}$$
$${{x_1} - {x_3} = 0}$$
$${{x_1} - {x_2} + {x_3} = 1}$$ has
A
Unique solution
B
No solution
C
Infinite number of solutions
D
Only one solution
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12