1
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 $$\mu$$ sec. The mobility (in cm2/volt-sec) will be
A
1,000
B
2,000
C
5,000
D
500,000
2
GATE ECE 1994
True or False
+1
-0
Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.
A
TRUE
B
FALSE
3
GATE ECE 1994
Fill in the Blanks
+1
-0
The transit time of the current carriers through the channel of an FET decides its ____________characteristics.
4
GATE ECE 1994
MCQ (Single Correct Answer)
+1
-0.3
The threshold voltage of an n-channel MOSFET can be increased by
A
increasing the channel dopant concentration
B
reducing the channel dopant concentration
C
reducing the gate-oxide thickness
D
reducing the channel length
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