A p-type silicon sample has a higher conductivity compared to an n-type sample having the same dopant concentration.

A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 $$\mu$$ sec. The mobility (in cm²/volt-sec) will be

Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.