1
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with $$N_D=10^{19}/cm^3$$. If the excess electron concentration in the steady state id $$\triangle n=10^{15}/cm^3$$ and if $$\tau_p=10\;\mu\;sec$$ [minority carrier life time] the generation rate due to irradiation
A
$$is\;10^{20}\;e-h\;pairs/cm^3/sec$$
B
$$is\;10^{24}\;e-h\;pairs/cm^3/sec$$
C
$$is\;10^{10}\;e-h\;pairs/cm^3/sec$$
D
cannot be determined as the given data is insufficient
2
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
The 6 V Zener diode shown in figure has zero Zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is: GATE ECE 1992 Electronic Devices and VLSI - PN Junction Question 16 English
A
1.2 kΩ
B
50 Ω
C
80 Ω
D
0 Ω
3
GATE ECE 1992
MCQ (Single Correct Answer)
+2
-0.6
An n-channel JFET has a pinch-off voltage VP = -5 V, VDS(max) = 20 V and gm = 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT for
A
VGS = - 7 V and VDS = 0 V
B
VGS = 0 V and VDS = 0 V
C
VGS = 0 V and VDS = 20 V
D
VGS = - 7 V and VDS = 20 V
4
GATE ECE 1992
Fill in the Blanks
+2
-0
In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base junction and the depletion region generating current, the base current will __________. (increase/decrease/remain constant).
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