1
GATE ECE 1991
MCQ (Single Correct Answer)
+2
-0.6
A silicon sample is uniformly doped with 1016 phosphorous atoms/cm3 and 2 ×1016 boron atoms/cm3. If all the dopants are fully ionized, the material is
A
n-type with carrier concentration of 1016/cm3
B
p-type with carrier concentration of 1016/cm3
C
p-type with carrier concentration of 2 ×1016/cm3
D
n-type with carrier concentration of 2 ×1016/cm3
2
GATE ECE 1991
MCQ (Single Correct Answer)
+2
-0.6
The small signal capacitances of an abrupt P+−N junction is 1 nF at zero bias. If the built-in voltage is 1 volt, the capacitance at a reverse bias voltage of 99 volts is equal to
A
100
B
0.1
C
0.01
D
10
3
GATE ECE 1991
Numerical
+2
-0
Referring to the figure. The switch S is in position 1 initially and steady state conditions exist from time t = 0 to t = t0. At t = t0, the switch is suddenly thrown into position 2. The current I through the 10K resistor as a function of time t, from t = 0 is (in mA) _____________.

(Give the sketch showing the magnitudes of the current at t = 0, t = t0 and t = $$\infty$$ )

GATE ECE 1991 Electronic Devices and VLSI - PN Junction Question 17 English
Your input ____
4
GATE ECE 1991
Subjective
+5
-0
The program given below is run on an 8085 based microcomputer system. Determine the contents of the registers: PC, SP, B, C, H, L after a half instruction is executed.
LOC
2000 START: LXI SP, 1000H
LXI H, 2F37 H
XRA A
MOV A, H
INX H
PUSH H
CZ 20 FF H JMP 3000 H
HLT
20FF ADD H
RZ
POP B
PUSH B
RNZ
HLT
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