1
COMEDK 2024 Evening Shift
+1
-0

The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode.

Which of the following is correct?

I II III IV`
A - unbiased diode A - Forward biased diode A - unbiased diode A - unbiased diode
B - Reverse biased B - Reverse biased B - Forward biased B - unused diode
C - Forward biased C - unbiased C - Reverse biased C - Forward biased

A
II
B
III
C
IV
D
I
2
COMEDK 2024 Morning Shift
+1
-0

In a given semiconductor, the ratio of the number density of electron to number density of hole is $$2: 1$$. If $$\frac{1}{7}$$th of the total current is due to the hole and the remaining is due to the electrons, the ratio of the drift velocity of holes to the drift velocity of electrons is :

A
$$\frac{2}{3}$$
B
$$\frac{3}{1}$$
C
$$\frac{3}{2}$$
D
$$\frac{1}{3}$$
3
COMEDK 2024 Morning Shift
+1
-0

An ideal diode is connected in series with a capacitor. The free ends of the capacitor and the diode are connected across a $$220 \mathrm{~V}$$ ac source. Now the potential difference across the capacitor is :

A
$$110 \mathrm{~V}$$
B
$$311 \mathrm{~V}$$
C
$$2 \sqrt{110} \mathrm{~V}$$
D
$$\sqrt{220} \mathrm{~V}$$
4
COMEDK 2024 Morning Shift
+1
-0

Though $$\mathrm{Sn}$$ and $$\mathrm{Si}$$ are $$4^{\text {th }}$$ group elements, $$\mathrm{Sn}$$ is a metal while $$\mathrm{Si}$$ is a semiconductor because

A
$$\mathrm{Sn}$$ has more electrons than $$\mathrm{Si}$$
B
The energy gap of $$\mathrm{Sn}$$ is zero volt while that of $$\mathrm{Si}$$ is $$0.07 \mathrm{~V}$$
C
The energy gap of $$\mathrm{Sn}$$ is $$1.1 \mathrm{~eV}$$ volt while that of $$\mathrm{Si}$$ is $$0.07 \mathrm{~V}$$
D
$$\mathrm{Sn}$$ has more holes than $$\mathrm{Si}$$
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