The conductivity of a semiconductor increases with increase in temperature because
A) number density of free current carriers increases
B) relaxation time increases
C) both number density of carriers and relaxation time increase
D) number density of current carriers increases, relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density
The output of the given circuit is
A. Negatively rectified half wave
B. Positively rectified half wave
C. Negatively rectified full wave
D. Zero all times
The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode.
Which of the following is correct?
I | II | III | IV` |
---|---|---|---|
A - unbiased diode | A - Forward biased diode | A - unbiased diode | A - unbiased diode |
B - Reverse biased | B - Reverse biased | B - Forward biased | B - unused diode |
C - Forward biased | C - unbiased | C - Reverse biased | C - Forward biased |
$$ \text { In a p-n junction, the depletion layer of thickness } 1 \mu \mathrm{m} \text { has } 0.05 \mathrm{~V} \text { potential across it. The electric field in } N C^{-1} \text { is } $$