$$ \text { In a p-n junction, the depletion layer of thickness } 1 \mu \mathrm{m} \text { has } 0.05 \mathrm{~V} \text { potential across it. The electric field in } N C^{-1} \text { is } $$

The mobility of the charge carriers increases with

In intrinsic semiconductors at room temperature, number of electrons and holes are

A semiconductor $$\mathrm{X}$$ is made by doping silicon with phosphorous. A second semiconductor $$\mathrm{Y}$$ is made by doping silicon with aluminium. The two are joined by a suitable technique to form a $$\mathrm{p}$$-$$\mathrm{n}$$ junction and is connected to a battery such that $$\mathrm{Y}$$ is joined to negative of the battery and $$\mathrm{X}$$ to the positive of the battery. Which of the following statements is correct?