1
GATE EE 2005
MCQ (Single Correct Answer)
+2
-0.6
The figure shows the voltage across a power semiconductor device and the current through the device during a switching transition. Is the transition a turn ON transition or a turn OFF transition? What is the energy lost during the transition? GATE EE 2005 Power Electronics - Power Semiconductor Devices Question 12 English
A
Turn ON, $${{V{\rm I}} \over {2\left( {{t_1} + {t_2}} \right)}}$$
B
Turn OFF, $$V{\rm I}\left( {{t_1} + {t_2}} \right)$$
C
Turn ON, $$V{\rm I}\left( {{t_1} + {t_2}} \right)$$
D
Turn OFF, $${{V{\rm I}} \over {2\left( {{t_1} + {t_2}} \right)}}$$
2
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
A
a parabola
B
a straight line
C
a rectangular hyperbola
D
an exponentially decaying function
3
GATE EE 2005
MCQ (Single Correct Answer)
+2
-0.6
The parameters of transposed overhead transmission line are given as: self reactance $${X_s} = 0.4\,\,\Omega /km$$ and Mutual reactance $$\,{X_m} = 0.1\,\,\Omega /km.\,\,$$ The positive sequence reactance $${X_1}$$ and zero sequence reactance $${X_0}$$ respectively in $$\Omega /km$$ are
A
$$0.3, 0.2$$
B
$$0.5, 0.2$$
C
$$0.5, 0.6$$
D
$$0.3, 0.6$$
4
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The p.u. parameters for a $$500$$ MVA machine on its own base are:
Inertia, M = $$20$$ p.u.; reactance X = $$2$$ p.u. The p.u. values of inertia and reactance on $$100$$ MVA common base, respectively are
A
$$4, 0.4$$
B
$$100, 10$$
C
$$4, 10$$
D
$$100,0.4$$
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