1
GATE EE 2005
MCQ (Single Correct Answer)
+2
-0.6
An electronic switch $$S$$ is required to block voltages of either polarity during its OFF state as shown in figure (a). This switch is required to conduct in only one direction during its ON state as shown in the figure (b). GATE EE 2005 Power Electronics - Power Semiconductor Devices Question 11 English 1

Which of the following are valid realizations of the switch $$s$$?

GATE EE 2005 Power Electronics - Power Semiconductor Devices Question 11 English 2
A
Only $$1$$
B
$$1$$ and $$2$$
C
$$1$$ and $$3$$
D
$$3$$ and $$4$$
2
GATE EE 2005
MCQ (Single Correct Answer)
+2
-0.6
The figure shows the voltage across a power semiconductor device and the current through the device during a switching transition. Is the transition a turn ON transition or a turn OFF transition? What is the energy lost during the transition? GATE EE 2005 Power Electronics - Power Semiconductor Devices Question 12 English
A
Turn ON, $${{V{\rm I}} \over {2\left( {{t_1} + {t_2}} \right)}}$$
B
Turn OFF, $$V{\rm I}\left( {{t_1} + {t_2}} \right)$$
C
Turn ON, $$V{\rm I}\left( {{t_1} + {t_2}} \right)$$
D
Turn OFF, $${{V{\rm I}} \over {2\left( {{t_1} + {t_2}} \right)}}$$
3
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
A
a parabola
B
a straight line
C
a rectangular hyperbola
D
an exponentially decaying function
4
GATE EE 2005
MCQ (Single Correct Answer)
+2
-0.6
At a $$220$$ kV substation of a power system, it is given that the three-phase fault level is $$4000$$ MVA and single-line to ground fault level is $$5000$$ MVA. Neglecting the resistance and the shunt susceptances of the system.

The positive sequence driving point reactance at the bus is

A
$$2.5\,\Omega $$
B
$$4.033\,\Omega $$
C
$$5.5\,\Omega $$
D
$$12.1\,\Omega $$
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