1
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
A
a parabola
B
a straight line
C
a rectangular hyperbola
D
an exponentially decaying function
2
GATE EE 2005
MCQ (Single Correct Answer)
+2
-0.6
At a $$220$$ kV substation of a power system, it is given that the three-phase fault level is $$4000$$ MVA and single-line to ground fault level is $$5000$$ MVA. Neglecting the resistance and the shunt susceptances of the system.

The positive sequence driving point reactance at the bus is

A
$$2.5\,\Omega $$
B
$$4.033\,\Omega $$
C
$$5.5\,\Omega $$
D
$$12.1\,\Omega $$
3
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The p.u. parameters for a $$500$$ MVA machine on its own base are:
Inertia, M = $$20$$ p.u.; reactance X = $$2$$ p.u. The p.u. values of inertia and reactance on $$100$$ MVA common base, respectively are
A
$$4, 0.4$$
B
$$100, 10$$
C
$$4, 10$$
D
$$100,0.4$$
4
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
High Voltage DC (HVDC) transmission is mainly used for
A
bulk power transmission over very long distances
B
inter-connecting two systems with the same nominal frequency
C
eliminating reactive power requirement in the operation
D
minimizing harmonics at the converter stations
EXAM MAP