Which one of the following statements is true? A p-type semiconductor is doped with

The specific heat of argon at constant pressure and constant volume are $C_p$ and $C_v$ respectively. It's density ' $\rho$ ' at N.T.P. will be $[\mathrm{P}$ and T are pressure and temperature respectively at N.T.P.]

The combination of NAND gates is shown in figure (I) and (II). For the given inputs, the outputs in both the combinations are respectively.