1
GATE EE 2017 Set 1
MCQ (Single Correct Answer)
+1
-0.3
For the power semiconductor devices $$IGBT, MOSFET,$$ Diode and Thyristor, which one of the following statements is TRUE?
A
All of the four are majority carrier devices.
B
All the four are minority carrier devices
C
$$IGBT$$ and $$MOSFET$$ are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.
D
$$MOSFET$$ is majority carrier device, whereas $$IGBT,$$ Diode, Thyristor are minority carrier devices.
2
GATE EE 2017 Set 1
Numerical
+2
-0
The figure below shows an uncontrolled diode bridge rectifier supplied form a $$220$$ Z$$V,$$ $$50$$ $$Hz,$$ $$1$$-phase $$ac$$ source. The load draws a constant $${{\rm I}_0}$$ $$=14A.$$ The conduction angle of the diode $${D_1}$$ in degrees (rounded off to two decimal places) is ______________. GATE EE 2017 Set 1 Power Electronics - Single and Three Phase Rectifier Question 19 English
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3
GATE EE 2017 Set 1
MCQ (Single Correct Answer)
+2
-0.6
The input voltage $${V_{DC}}$$ of the buck-boost converter shown below varies from $$32$$ $$V$$ to $$72$$ $$V.$$ Assume that all components are ideal, inductor current is continuous, and output voltage is ripple free. The range of duty ratio $$D$$ of the converter for which the magnitude of the steady state output voltage remains constant at $$48$$ $$V$$ is GATE EE 2017 Set 1 Power Electronics - Choppers and Commutation Techniques Question 13 English
A
$${2 \over 5} \le D \le {3 \over 5}$$
B
$${2 \over 5} \le D \le {3 \over 4}$$
C
$$0 \le D \le 1$$
D
$${1 \over 3} \le D \le {2 \over 3}$$
4
GATE EE 2017 Set 1
Numerical
+1
-0
In the converter circuit shown below, the switches are controlled such that the load voltage $${v_0}\left( t \right)$$ is a $$400$$ $$Hz$$ square wave. GATE EE 2017 Set 1 Power Electronics - Inverters Question 25 English

The RMS value of the fundamental component of $${v_0}\left( t \right)$$ in volts is ___________.

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