1
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
The circuit in figure shows a full-wave rectifier. The input voltage is $$230$$ $$V$$ $$(rms)$$ single-phase ac. The peak reverse voltage across the diodes $${D_1}$$ and $${D_2}$$ is GATE EE 2004 Power Electronics - Single and Three Phase Rectifier Question 53 English
A
$$100\sqrt 2 \,V$$
B
$$100$$ $$V$$
C
$$50\sqrt 2 \,V$$
D
$$50$$ $$V$$
2
GATE EE 2004
MCQ (Single Correct Answer)
+2
-0.6
A $$MOSFET$$ rated for $$15 A,$$ carries a periodic current as shown in figure. The ON state resistance of the MOSFET is $$0.15$$ $$\Omega .$$ The average ON state loss in the $$MOSFET$$ is GATE EE 2004 Power Electronics - Power Semiconductor Devices Question 13 English
A
$$33.8$$ $$W$$
B
$$15.0$$ $$W$$
C
$$7.5$$ $$W$$
D
$$3.8$$ $$W$$
3
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of $$10$$ $$mA,$$ for guaranteed turn-on. The value of $$R$$ required for the thyristor to turn on reliably under all conditions of $${V_b}$$ variation is GATE EE 2004 Power Electronics - Power Semiconductor Devices Question 22 English
A
$$10000\,\Omega $$
B
$$1600\,\Omega $$
C
$$1200\,\Omega $$
D
$$800\,\Omega $$
4
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$
A
both the base - emitter and base-collector junctions are reverse biased
B
the base - emitter junctions is reverse biased, and the base-collector junction is forward biased
C
the base - emitter junction is forward biased, and the base-collector junction is reverse biased
D
both the base - emitter and base-collector junctions are forward biased.
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