1
GATE EE 2004
MCQ (Single Correct Answer)
+2
-0.6
In the Schmitt trigger circuit shown in figure, if $${V_{CE}}\left( {sat} \right) = 0.1V,$$ the output logic low level $$\left( {{V_{OL}}} \right)$$ is GATE EE 2004 Analog Electronics - Operational Amplifier Question 34 English
A
$$1.25V$$
B
$$1.35V$$
C
$$2.5V$$
D
$$5.0V$$
2
GATE EE 2004
MCQ (Single Correct Answer)
+2
-0.6
The transconductance $${g_m}$$ of the transistor shown in figure is $$10$$ $$mS.$$ The value of input resistance $${R_{in}}$$ is GATE EE 2004 Analog Electronics - Small Signal Modeling Question 8 English
A
$$10\,k\Omega $$
B
$$8.3\,k\Omega $$
C
$$5\,k\Omega $$
D
$$2.5\,k\Omega $$
3
GATE EE 2004
MCQ (Single Correct Answer)
+2
-0.6
The value of $$R$$ for which the $$PMOS$$ transistor in Figure. $$Q$$ $$63$$ will be biased in linear region is GATE EE 2004 Analog Electronics - Bjt and Mosfet Biasing Question 17 English
A
$$220\,\Omega $$
B
$$470\,\Omega $$
C
$$680\,\Omega $$
D
$$1200\,\Omega $$
4
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cutoff region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT
A
both the base-emitter and base-collector junctions are reverse biased
B
the base-emitter junctions is reverse biased, and the base-collector junction is forward biased
C
the base-emitter junction is forward biased, and the base-collector junction is reverse biased
D
both the base-emitter and base-collector junctions are forward biased
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