Bjt and Mosfet Biasing · Analog Electronics · GATE EE
Start PracticeMarks 1
GATE EE 2016 Set 1
A transistor circuit is given below. The Zener diode breakdown voltage is $$5.3$$ $$V$$ as shown. Take base to emitter voltage drop to be $$0.6$$ V. T...
GATE EE 2015 Set 1
In the given circuit, the silicon transistor has $$\beta $$ $$=75$$ and a collector voltage $${V_C} = 9\,V.$$ Then the ratio of $${R_B}$$ and $${R_C}$...
GATE EE 2015 Set 2
When a bipolar junction transistor is operating in the saturation mode, which one of the following statements is TRUE about the state of its collector...
GATE EE 2015 Set 2
In the following circuit, the transistor is in active mode and $${V_C} = 2V.$$ To get $${V_C} = 4V,$$ we replace $${R_C}$$ with $${R_C}.$$ Then the ra...
GATE EE 2014 Set 1
The magnitude of the mid-band voltage gain of the circuit shown in figure is (assuming $${h_{fe}}$$ of the transistor to be $$100$$)
...
GATE EE 2014 Set 2
The transistor in the given circuit should always be in active region. Take $${V_{CE\left( {sat} \right)}} = 0.2\,\,V,\,\,\,{V_{BE}} = 0.7\,\,V.\,\,\...
GATE EE 2007
The common emitter forward current gain of the transistor shown is $${\beta _p} = 100.$$ The transistor is operating in
...
GATE EE 2007
The three terminal linear voltage regular is connected to a $$10\Omega $$ load resistor as shown in the figure. If $${V_{in}}$$ is $$10$$ $$V,$$ what ...
GATE EE 2005
Assume that the $$N$$-channel $$MOSFET$$ shown in figure is ideal, and that its threshold voltage is The voltage $${\rm I}V,$$ the voltage $${{V_{ab}...
GATE EE 2004
Two perfectly matched silicon transistors are connected as shown in figure. The value of the current $${\rm I}$$ is
...
GATE EE 2004
A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cutoff region (OFF state) or in the saturation region (ON s...
GATE EE 2003
In the circuit of figure shown, assume that the transistor has $${h_{fe}} = 99$$ and $${V_{BE}} = 0.7V.$$
The value of collector current $${{\rm I}_C...
GATE EE 2003
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET...
GATE EE 1999
The enhancement type n-channel MOSFET is represented by the symbol
GATE EE 1998
One of the applications of current mirror is
GATE EE 1996
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
GATE EE 1994
In the transistor circuit shown in figure. Collector to ground voltage is $$+20V.$$ Which of the following is the probable cause of error?
...
GATE EE 1991
Figure shown below shows a common emitter amplifier. The quiescent collector voltage of the circuit is approximately.
...
Marks 2
GATE EE 2017 Set 1
The circuit shown in the figure uses matched transistors with a thermal voltage $${V_T} = 25\,mV.$$ The base currents of the transistors are negligibl...
GATE EE 2017 Set 2
For the circuit shown in the figure below, it is given that $${V_{CE}} = {{{V_{CC}}} \over 2}.$$ The transistor has $$\beta = 29$$ and $${V_{BE}} = 0...
GATE EE 2012
The voltage gain $${A_V}$$ of the circuit shown below is
...
GATE EE 2011
The transistor used in the circuit shown below has a $$\beta $$ of $$30$$ and $${{\rm I}_{CBO}}$$ is negligible.
If the forward voltage drop of diod...
GATE EE 2010
The transistor circuit shown uses a silicon transistor with $${V_{BE}} = 0.7V,{{\rm I}_C} \approx {{\rm I}_E}$$ and a $$DC$$ current gain of $$100.$$ ...
GATE EE 2008
Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the $$\beta $$ of the transistors to be very high and forward...
GATE EE 2006
Consider the circuit shown in figure. If the $$\beta $$ of the transistor is $$30$$ and $${{\rm I}_{CBO}}$$ is $$20$$ $$nA$$ and the input voltage ...
GATE EE 2005
The common emitter amplifier shown in the figure is biased using a $$1mA$$ ideal current source. The approximate base current value is_____.
...
GATE EE 2005
Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are ...
GATE EE 2005
Assume that the threshold voltage of the $$N$$-channel $$MOSFET$$ shown in figure is $$0.75$$ $$V.$$ The output characteristics of the $$MOSFET$$ are ...
GATE EE 2004
The value of $$R$$ for which the $$PMOS$$ transistor in Figure. $$Q$$ $$63$$ will be biased in linear region is
...
GATE EE 2003
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$M...
GATE EE 2003
In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm ...
GATE EE 2001
An $$N$$-channel $$JFET$$ having a pinch-off voltage $$\left( {{V_P}} \right)$$ of $$-5V$$ shows a transconductance (gm) of $$1$$ $$mA/V$$ when the ap...
GATE EE 2000
In the circuit of figure, the value of the base current $${{\rm I}_B}$$ will be
...
GATE EE 1998
A $$NPN$$ Si transistor is meant for low-current audio amplification. Match is following characteristic against their values.
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Marks 5
GATE EE 2002
For the circuit shown in Figure, $${{\rm I}_E} = 1\,\,mA,\,\,\,\beta = 99$$ and $${V_{BE}} = 0.7\,\,V$$ determine
(a) Current through $${R_1}$$ and $...