1
WB JEE 2008
+1
-0.25

A Si and a Ge diode has identical physical dimensions. The band gap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes

A
The reverse current in Ge is larger than that in Si
B
The reverse current in Si is larger than that in Ge
C
The reverse current is identical in the two diodes
D
The relative magnitude of the reverse currents cannot be determined from the given data only
2
WB JEE 2008
+1
-0.25

The binary number 10111 is equivalent to the decimal number

A
19
B
31
C
23
D
22
3
WB JEE 2024
+1
-0.25

A $$2 \mathrm{~V}$$ cell is connected across the points $$\mathrm{A}$$ and $$\mathrm{B}$$ as shown in the figure. Assume that the resistance of each diode is zero in forward bias and infinity in reverse bias. The current supplied by the cell is

A
0.5 A
B
0.2 A
C
0.1 A
D
0.25 A
4
WB JEE 2024
+2
-0.5

In the given network of AND and OR gates, output Q can be written as (assuming n even)

A
$$\mathrm{X}_0 \mathrm{X}_1+\mathrm{X}_2 \mathrm{X}_3+\ldots \mathrm{X}_{\mathrm{n}-1} \mathrm{X}_{\mathrm{n}}$$
B
$$\mathrm{X}_0 \mathrm{X}_1 \ldots \mathrm{X}_{\mathrm{n}}+\mathrm{X}_1 \mathrm{X}_2 \ldots \mathrm{X}_{\mathrm{n}}+\mathrm{X}_2 \mathrm{X}_3 \ldots \mathrm{X}_{\mathrm{n}}+\mathrm{X}_{\mathrm{n}}$$
C
$$\mathrm{X}_0 \mathrm{X}_1 \ldots \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}-2} \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}}$$
D
$$\mathrm{X}_0 \mathrm{X}_1 \ldots \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_2 \mathrm{X}_3 \mathrm{X}_5 \ldots \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}-2} \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}}$$
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