WB JEE 2008 | Electronic Devices Question 1 | Physics

WB JEE 2008

MCQ (Single Correct Answer)

-0.25

A Si and a Ge diode has identical physical dimensions. The band gap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes

The reverse current in Ge is larger than that in Si

The reverse current in Si is larger than that in Ge

The reverse current is identical in the two diodes

The relative magnitude of the reverse currents cannot be determined from the given data only

WB JEE 2008

MCQ (Single Correct Answer)

-0.25

The binary number 10111 is equivalent to the decimal number

WB JEE 2024

MCQ (Single Correct Answer)

-0.25

A $$2 \mathrm{~V}$$ cell is connected across the points $$\mathrm{A}$$ and $$\mathrm{B}$$ as shown in the figure. Assume that the resistance of each diode is zero in forward bias and infinity in reverse bias. The current supplied by the cell is

WB JEE 2024 Physics - Electronic Devices Question 1 English

0.5 A

0.2 A

0.1 A

0.25 A

WB JEE 2024

MCQ (Single Correct Answer)

-0.5

In the given network of AND and OR gates, output Q can be written as (assuming n even)

WB JEE 2024 Physics - Electronic Devices Question 2 English

$$\mathrm{X}_0 \mathrm{X}_1+\mathrm{X}_2 \mathrm{X}_3+\ldots \mathrm{X}_{\mathrm{n}-1} \mathrm{X}_{\mathrm{n}}$$

$$\mathrm{X}_0 \mathrm{X}_1 \ldots \mathrm{X}_{\mathrm{n}}+\mathrm{X}_1 \mathrm{X}_2 \ldots \mathrm{X}_{\mathrm{n}}+\mathrm{X}_2 \mathrm{X}_3 \ldots \mathrm{X}_{\mathrm{n}}+\mathrm{X}_{\mathrm{n}}$$

$$\mathrm{X}_0 \mathrm{X}_1 \ldots \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}-2} \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}}$$

$$\mathrm{X}_0 \mathrm{X}_1 \ldots \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_2 \mathrm{X}_3 \mathrm{X}_5 \ldots \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}-2} \mathrm{X}_{\mathrm{n}-1}+\mathrm{X}_{\mathrm{n}}$$

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