GATE EE 1993 | GATE EE Year Wise Previous Years Questions

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GATE EE 1993

MCQ (Single Correct Answer)

-0.3

The thermal resistance between the body of a power semiconductor device and the ambient is expressed as

Voltage across the device divided by current through the device

Average power dissipated in the device divided by the square of the $$RMS$$ current in the device

Average power dissipted in the device divided by the temperature difference from body to ambient

Temperature difference from body to ambient divided by average power dissipated in the divice

GATE EE 1993

MCQ (Single Correct Answer)

-0.3

In load flow analysis, the load connected at a bus is represented as

Constant current drawn from the Bus

Constant impedance connected at the bus

Voltage and frequency dependent source at the bus

Constant real and reactive power drawn from the bus.

GATE EE 1993

MCQ (Single Correct Answer)

-0.6

The distribution system shown in figure is to be protected by over current system of protection. For proper fault discrimination directional over current relays will be required at locations GATE EE 1993 Power System Analysis - Switch Gear and Protection Question 14 English

GATE EE 1993 Power System Analysis - Switch Gear and Protection Question 14 English

$$1$$ & $$4$$

$$2$$ & $$3$$

$$1,4$$ & $$5$$

$$2, 3$$ & $$5$$

GATE EE 1993

MCQ (Single Correct Answer)

-0.3

The transient stability of the power system can be effectively improved by

Excitation control

Phase shifting transformer

Single pole switching of circuit breakers

Increasing the turbine valve opening

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