Consider the circuit shown in Figure (a). A gate pulse $v_g$ is applied between time instants $t_0$ and $t_1$. After $t_1$, during the MOSFET turn OFF process, it experiences a voltage overshoot.

Based on the $v_{d s}$ waveforms shown in Figure (b), which one of the following options is correct?

Consider the circuit shown. Assume that the diode $D$ is ideal. The supply voltage $v_s=325 \sin (2 \pi 50) \vee, L=500 \mu \mathrm{H}$, and $R=10 \Omega$. The peak diode current (in amperes) is $\_\_\_\_$ . (Round off to one decimal place)

Consider the single-phase voltage source inverter circuit feeding an inductive load (L). Assume that the power MOSFET switches are ideal. $\mathrm{S}_1$ and $\mathrm{S}_2$ are switched on during the first $10 \mu \mathrm{~s}$, and $\mathrm{S}_3$ and $\mathrm{S}_4$ are switched on during the next $10 \mu \mathrm{~s}$ in a switching cycle. The switches in the same leg are thus switched in a complementary fashion. Neglect the dead time. The waveform of the inductor current ( $i_L$ ) in the steady state is triangular with a peak value of 5 A as shown.

The rms value of the current through the switch $S_1$ is

Consider the boost converter circuit shown. Assume that the semiconductor devices are ideal. In steady state, the inductor current rises linearly from 0 A to 6 A in the first $10 \mu \mathrm{~s}$ and then falls linearly from 6 A to 0 A in the next $10 \mu \mathrm{~s}$ of every switching cycle as shown. The load resistance R is $10 \Omega$ and the capacitance C is $50010 \mu \mathrm{~F}$.

Neglect the ripple in the output voltage. What is the input voltage $V_{d c}$ ?