1
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
A
electrons and holes
B
positive ions and electrons
C
positive and negative ions
D
negative ions and holes
2
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
A non inverting op - amp amplifier is shown in figure. The o/p voltage is GATE EE 1996 Analog Electronics - Operational Amplifier Question 49 English
A
$${3 \over 2}\,\,\sin 100t$$
B
$$3\,\sin 100t$$
C
$$2\,\sin 100t$$
D
None of these
3
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
Let the magnitude of the gain in the inverting op - amp amplifier circuit shown be $$x$$ with switch $${S_1}$$ open. When the switch $${S_1}$$ is closed, the magnitude of gain becomes. GATE EE 1996 Analog Electronics - Operational Amplifier Question 48 English
A
$$x/2$$
B
$$-x$$
C
$$2$$ $$x$$
D
$$-2$$ $$x$$
4
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
In the transistor amplifier shown in figure, the ratio of small signal voltage gain when the emitter resistor is bypassed by the capacitor $$'{C_e}'$$ to when it is not bypassed. (Assuming of simplified approximate $$h$$- parameter model for transistor) is GATE EE 1996 Analog Electronics - Small Signal Modeling Question 4 English
A
$$1$$
B
$${{h_{fe}}}$$
C
$${{\left( {1 + {h_{fe}}} \right){R_e}} \over {h{\,_{ie}}}}$$
D
$$1 + {{\left( {1 + {h_{fe}}} \right){R_e}} \over {h{\,_{ie}}}}$$
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