TS EAMCET 2023 (Online) 13th May Morning Shift | Semiconductor Devices and Logic Gates Question 30 | Physics

The built-in potential of a $p-n$ junction diode is 0.7 V . If the diode is forward biased and the applied voltage is 0.3 V , the effective barrier height is

0.7 V

0.3 V

0.4 V

1 V

TS EAMCET 2023 (Online) 12th May Evening Shift

MCQ (Single Correct Answer)

-0

If the ratio of electron and hole currents in a semiconductor is $7 / 4$ and the ratio of drift velocities of electrons and holes is $5 / 4$, then ratio of concentrations of electrons and holes will be

$5: 7$

$7: 5$

$5: 9$

$9: 5$

TS EAMCET 2023 (Online) 12th May Evening Shift

MCQ (Single Correct Answer)

-0

When a semiconductor is doped with donor impurity

the hole concentration decreases and electron concentration increases

the hole concentration increases and electron concentration decreases

both hole concentration and electron concentration increase

both hole concentration and electron concentration decrease

TS EAMCET 2023 (Online) 12th May Morning Shift

MCQ (Single Correct Answer)

-0

In a transistor, the base current is $10 \mu \mathrm{~A}$ and the emitter current is 1 mA , then the collector current is

$990 \mu \mathrm{~A}$

$100 \mu \mathrm{~A}$

$1010 \mu \mathrm{~A}$

$90 \mu \mathrm{~A}$

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