Semiconductor Devices and Logic Gates · Physics · TS EAMCET

The current amplification factor of a transistor in common emitter configuration is 80 . If the emitter current is 2.43 mA , then the base current is

The negative feedback in an amplifier

At absolute zero temperature, a semiconductor behaves like

Three logic gates are connected as shown in the figure. If the inputs are $A=1, B=0$ and $C=1$, then the values of $y_1, y_2$ and $y_3$ respectively are

The graph between the input voltage $\left(V_i\right)$ and the output voltage ( $V_o$ ) of a transistor connected in common emitter configuration is shown in the figure. The active, saturation and cutoff regions of the transistor are respectively

Which of the following logic gates is a universal gate?

According to a graph drawn between the input and output voltages of a transistor connected in common emitter configuration, the region in which transistor acts as a switch is

If the energy gap of a semiconductor used for the fabrication of an LED is nearly 1.9 eV , then the color of the light emitted by the LED is

$10^{10}$ electrons enter the emitter of a junction transistor in a time of $0.4 \mu \mathrm{~s}$. If $5 \%$ of the electrons are lost in the base, then the collector current is

An electron in $n$-region of a $p-n$ junction moves towards the junction with a speed of $5 \times 10^5 \mathrm{~ms}^{-1}$. If the barrier potential of the junction is 0.45 V , then the speed with which the electron enters the $p$-region after penetration through the barrier is

(Charge of the electron $=1.6 \times 10^{-19} \mathrm{C}$ and mass of the electron $=9 \times 10^{-31} \mathrm{~kg}$ )

The power gain and voltage gain of a transistor connected in common emitter configuration are 1800 and 60 respectively. If the change in the emitter current is 0.62 mA , then the change in the collector current is

Six logic gates are connected as shown in the figure. The values of $y_1, y_2$ and $y_3$ respectively are

Match the devices given in List-I with their uses given in List-II.

The correct answer is

To get output 1 for the following logic circuit, the correct choice of the inputs is

A zener diode of zener voltage 30 V is connected in circuit as shown in the figure. The maximum current through the zener diode is

Three logic gates are connected as shown in the figure. If the inputs are $A=1$ and $B=1$, then the values of $Y_1$ and $Y_2$ respectively are

When an $n$-type semiconductor is heated

5 logic gates are connected as shown in the figure. If $A$ and $B$ are the inputs, $Y$ is the output then the truth table of the circuit is

Photodiodes are mostly operated in reverse biased condition because

Which of the following statements is true about LEDs?

In the logic circuit given below, if $X=1$ and $Y=1$, then the values of $P, Q$ and $R$ are

The symbol given below represents

The phase difference between the input voltage and the output voltage in a common emitter amplifier is

The built-in potential of a $p-n$ junction diode is 0.7 V . If the diode is forward biased and the applied voltage is 0.3 V , the effective barrier height is

When a semiconductor is doped with donor impurity

The band gap in a semiconductor is 0.6 eV . The maximum wavelength of electromagnetic radiation which can create a hole electron pair in the semiconductor is equal to

[use $h c=1242 \mathrm{eV}-\mathrm{nm}$ ]

Identify the logic gate from the following with the same truth table characteristics of the logic circuit below

A $p-n$ junction is fabricated from a semiconductor with band gap of 2.8 eV . what approximate wavelength it cannot detect? [Use, $h=6 \times 10^{-34} \mathrm{~m}^2 \mathrm{~kg} / \mathrm{s}$ ]

Identify the logic operation performed by the following circuit.

The number of silicon atoms per $\mathrm{m}^3$ is $5 \times 10^{28}$. This is doped with $4.5 \times 10^{21}$ atoms $/ \mathrm{m}^3$ of arsenic. The ratio of number of electrons to number of holes after doping is (take $n_i=$ number of thermally generated electrons $=1.5 \times 10^{16} / \mathrm{m}^3$ )

The output of the following circuit is equivalent to $.......$ gate

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given to be $I=I_0\left(e^{\frac{V}{2 V_T}}-1\right)$, where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction, then $r_d\left(1000 I_0\right)=\alpha r_d\left(10 I_0\right)$, where $\alpha$ is approximately equal to

For an $n-p-n$ transistor structure, which of the following statements is not true?

The behaviour of the circuit is like $\_\_\_\_$ gate

In a NAND gate, $A$ and $B$ are inputs and $Y$ is the output, then the correct option is

Which of the following circuits satisfies the logic condition $A=1, B=1$ and $D=1$ ?

In an $n-p-n$ transistor, $95 \%$ of emitted electrons reach the collector. If the base current is 2 mA , then collector current is

The current gain of a transistor is 0.98 . If the transistor is used in a common emitter arrangement what would be the change in collector current corresponding to a change of 0.5 mA in the base current?

In a $p-n-p$ transistor, the current carriers are

In $p-n-p$ transistor, the collector current is

The output of a NOR gate is HIGH when

A $p-n$ junction diode can withstand upto 20 mA current under forward bias. The diode has a potential difference of 0.5 V across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of $125 \Omega$ is connected in series with it?

In a Zener diode,

A Zener diode is connected to battery and a load resistance as shown below

The currents $I, I_Z$ and $I_L$ respectively are

A semiconductor is doped with phosphorous atoms as impurity. The impurity levels created in the semiconductor are close to the

Which of the following depicts the output of the full wave rectifier with capacitor filter for the following AC input?

The Boolean expression of the circuit given in figure is