TS EAMCET 2022 (Online) 19th July Morning Shift | Semiconductor Devices and Logic Gates Question 41 | Physics

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given to be $I=I_0\left(e^{\frac{V}{2 V_T}}-1\right)$, where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction, then $r_d\left(1000 I_0\right)=\alpha r_d\left(10 I_0\right)$, where $\alpha$ is approximately equal to

$1 / 10$

$1 / 100$

$1 / 1000$

TS EAMCET 2022 (Online) 19th July Morning Shift

MCQ (Single Correct Answer)

-0

For an $n-p-n$ transistor structure, which of the following statements is not true?

Emitter is heavily doped and moderate in size.

Base is lightly doped and thin in size.

Collector is lightly doped and large in size.

Collector is moderately doped and large in size.

TS EAMCET 2022 (Online) 18th July Evening Shift

MCQ (Single Correct Answer)

-0

The behaviour of the circuit is like $\_\_\_\_$ gate

TS EAMCET 2022 (Online) 18th July Evening Shift Physics - Semiconductor Devices and Logic Gates Question 21 English

NOR

NAND

AND

TS EAMCET 2022 (Online) 18th July Morning Shift

MCQ (Single Correct Answer)

-0

In a $p$-type semiconductor, which of the following statements is true?

Holes are majority carriers and trivalent atoms are the dopants.

Electrons are minority carriers and pentavalent atoms are the dopants.

Electrons are majority carriers and trivalent atoms are the dopants.

Holes are minority carriers and pentavalent atoms are the dopants.

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